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Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

Category:
Discrete Semiconductors
Price:
Negotiated
Payment Method:
T/T, Western Union
Specifications
Family:
Discrete Semiconductor Products
Category:
Electronic Components-MOSFET (Metal Oxide)
Series:
HEXFET MOSFET (Metal Oxide)
Base Part Number:
IRLR3915
Details:
N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak
Type:
Transistors - FETs, MOSFETs - Single
Description:
MOSFET N-CH 55V 30A DPAK
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:
Surface Mount
High Light:

Infineon HEXFET Power MOSFET

,

MOSFET N Channel 55V 30A

,

55V 30A HEXFET Power MOSFET

Introduction

IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products

 

N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak

 

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

 

Features :

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea

Product Technical Specifications

 

Part number IRLR3915TRPBF
Base part number IRLR3915
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IRLR3915

 

 

Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

 

 

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Stock:
MOQ:
10